absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current -6.5 i d @ v gs = 12v, t c = 100c continuous drain current -4.1 i dm pulsed drain current ? -26 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 165 mj i ar avalanche current ? -6.5 a e ar repetitive avalanche energy ? 2.5 mj dv/dt p eak diode recovery dv/dt ? -22 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 ( for 5s) weight 0.42 (typical) g pd - 90881c pre-irradiation international rectifier?s rad-hard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened power mosfet surface mount (lcc-18) 2/20/03 www.irf.com 1 product summary part number radiation level r ds(on) i d qpl part number IRHE9130 100k rads (si) 0.30 ? -6.5a jansr2n7389u irhe93130 300k rads (si) 0.30 ? -6.5a jansf2n7389u features: single event effect (see) hardened low r ds(on) low total gate charge proton t olerant simple drive requirements ease of paralleling hermetically sealed ceramic package surface mount light weight for footnotes refer to the last page lcc - 18 IRHE9130 100v, p-channel ref: mil-prf-19500/630 rad-hard ? hexfet ? mosfet technology
IRHE9130 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 ? ? v v gs =0 v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.112 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source ? ? 0.30 v gs = -12v, i d = -4.1a on-state resistance ? ? 0.35 ? v gs = -12v, i d = -6.5a v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 2.5 ? ? s ( )v ds > -15v, i ds = -4.1a i dss zero gate voltage drain current ? ? -25 v ds = -80v,v gs =0v ? ? -250 v ds = -80v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 45 v gs = -12v, i d = -6.5a q gs gate-to-source charge ? ? 10 nc v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 25 t d (on) turn-on delay time ? ? 30 v dd = -50v, i d = -6.5a, t r rise time ? ? 50 v gs = -12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 70 t f fall time ? ? 70 l s + l d total inductance ? 6.1 ? c iss input capacitance ? 1200 ? v gs = 0v, v ds = -25v c oss output capacitance ? 290 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 76 ? na ? nh ns a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 5.0 r thjpcb junction-to-pc board ? 1 9 ? solder to a copper clad pc board c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -6.5 i sm pulse source current (body diode) ? ? ? -26 v sd diode forward voltage ? ? -3.0 v t j = 25c, i s = -6.5a, v gs = 0v ? t rr reverse recovery time ? ? 250 ns t j = 25c, i f = -6.5a, di/dt -100a/ s q rr reverse recovery charge ? ? 0.74 c v dd -25v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from the center of drain pad to center of source pad
www.irf.com 3 pre-irradiation IRHE9130 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 ? -100 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage - 2.0 - 4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs = -20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -25 ? -25 a v ds =-80v, v gs =0v r ds(on) static drain-to-source ? ? 0.259 ? 0.259 ? v gs = -12v, i d =-4.1a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.30 ? 0.30 ? v gs = -12v, i d =-4.1a on-state resistance (lcc-18) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number IRHE9130 (jansr2n7389u) 2. part number irhe93130 (jansf2n7389u) fig a. single event effect, safe operating area v sd diode forward voltage ? ? -3.0 ? -3.0 v v gs = 0v, i s = -6.5a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds cu br i table 2. single event effect safe operating area ion let energy range v ds(v) mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =5v @ v gs =10v @ v gs =15v @ v gs =20v cu 28 285 43 -100 -100 -100 -70 -60 br 36.8 305 39 -100 -100 -70 -50 -40 i 59.8 343 32.6 -60 ? ? ? ?
IRHE9130 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -5.0v 1 10 100 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -6.5a 1 10 100 5 6 7 8 9 10 v = -50v 20 s pulse width ds -v , gate-to-source volta g e (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
www.irf.com 5 pre-irradiation IRHE9130 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0.1 1 10 100 0.2 1.0 1.8 2.6 3.4 4.2 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -6.5 v = -20v ds v = -50v ds v = -80v ds 0.1 1 10 100 1 10 100 1000 operation in this area limited by r ds ( on ) sin g le pulse t t = 150 c = 25 c j c -v , drain-to-source volta g e (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
IRHE9130 pre-irradiation 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 t , case temperature ( c) -i , drain current (a) c d fig 10a. switching time test circuit fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs
www.irf.com 7 pre-irradiation IRHE9130 fig 12c. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -2.9a -4.1a -6.5a fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge -12v d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v v gs
IRHE9130 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. -80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = -25v, starting t j = 25c, l= 7.8mh peak i l = -6.5a, v gs = -12v ? i sd -6.5a, di/dt -430a/ s, v dd -100v, t j 150c case outline and dimensions ? lcc-18 footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/03
|
